Oxford ICP-CVD

Location: Upper Level Cleanroom, Room 178

The Oxford PlasmaPro 100 Inductively-Coupled Plasma Chemical Vapor Deposition (ICP-CVD) system is designed to deposit highly-conformal films of SiO2 and SiNx on a wide range of samples. It can operate at temperatures between 70 & 250 °C. Typical film thicknesses are between 50 & 1000 nm. It is equipped with a He backside cooling system, and a mechanical wafer clamp. Samples must either be 100 mm wafers, or < 8x8cm piece-parts mounted onto such wafers.